PARTICULARITES DE LA DISTRIBUTION DE L'OXYGENE DANS LES MONOCRISTAUX DE SILICIUM LORS DE LA CROISSANCE EXCENTREE PAR LA METHODE DE CZOCHRALSKITUROVSKIJ BM.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 589-591; BIBL. 7 REF.Article

OBSERVATION OF STACKING FAULTS BY X-RAY TOPOGRAPHY.AUTHIER A.1974; J. PHYS., COLLOQ.; FR.; DA. 1974; VOL. 35; NO 7; PP. 121-127; ABS. FR.; BIBL. 25 REF.; (COLLOQ. DISSOCIATION DISLOCATIONS. EXPO. COMMUN.; BEAUNE, FR.; 1974)Conference Paper

"EFFET DE MEMOIRE" DANS LA REVELATION DES BOUCLES PRISMATIQUES DANS LES MONOCRISTAUX DE SILICIUM SANS DISLOCATIONMILEVSKIJ LS; ZARIF'YANTS ZA; SMOL'SKIJ IL et al.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 1; PP. 147-150; BIBL. 10 REF.Article

EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON.HU SM; PATRICK WJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 1869-1874; BIBL. 14 REF.Article

CHANNELING FLUX IN SINGLE CRYSTALS WITH INTERSTITIAL ATOMS: IMPURITY CONCENTRATION DEPENDENCE.DELLA MEA G; DRIGO AV; LO RUSSO S et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 5; PP. 1836-1846; BIBL. 16 REF.Article

INFLUENCE DE L'OXYGENE SUR LES PROPRIETES DU GERMANIUMGONCHAROV LA; IL'IN MA; RASHEVSKAYA EP et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 1; PP. 9-11; BIBL. 11 REF.Article

PHENOMENE DE CAPTURE PAR DES ATOMES D'OXYGENE DES ATOMES DE SILICIUM INTERSTITIELS CREES PAR BOMBARDEMENT ELECTRONIQUEMILEVSKIJ LS; SMOL'SKIJ IL; TKACHEVA TM et al.1975; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1975; VOL. 225; NO 4; PP. 815-818; BIBL. 13 REF.Article

X-RAY TOPOGRAPHY OF DEFECTS PRODUCED AFTER HEAT TREATMENT OF DISLOCATION-FREE SILICON CONTAINING OXYGEN.PATEL JR; AUTHIER A.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 118-125; BIBL. 17 REF.Article

RESISTIVITY ANNEALING PROPERTIES OF ALUMINIUM THIN FILMS AFTER ION IMPLANTATION AT LIQUID HELIUM TEMPERATURES.LAMOISE AM; CHAUMONT J; MEUNIER F et al.1975; J. PHYS., LETTRES; FR.; DA. 1975; VOL. 36; NO 12; PP. L.305-L.308; ABS. FR.; BIBL. 6 REF.Article

ANOMALOUS RESIDUAL DEFECTS IN SILICON AFTER ANNEALING OF THROUGH OXIDE PHOSPHORUS IMPLANTED SAMPLES.NATSUAKI N; TAMURA M; MIYAO M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 47-51; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

ASSOCIATION OF IRON MICROTRACES WITH OXYGEN IN TIN CHALCOGENIDES.FANO V; ORTALLI I.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 1; PP. 210-212; BIBL. 5 REF.Article

ETUDE DES COUCHES SEMI-ISOLANTES D'ASGA DOPE A L'OXYGENE PAR IMPLANTATION IONIQUE A HAUTE ENERGIE.FAVENNEC PN; PALMIER JF.1975; DGRST-7371349; FR.; DA. 1975; PP. 1-27; H.T. 19; ABS. ANGL.; BIBL. 2 P.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

GE-NITRIDE, GE-OXIDE, AND GE-OXYNITRIDE FORMATION BY ION IMPLANTATION.STEIN HJ.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 8; PP. 1073-1076; BIBL. 18 REF.Article

TOTAL OXYGEN CONTENT OF GALLIUM PHOSPHIDE GROWN BY THE CZOCHRALSKI TECHNIQUE USING LIQUID ENCAPSULATION.KIM CK.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 243-245; BIBL. 11 REF.Article

THE EFFECTS OF OXYGEN DOPING AND SUBSEQUENT ANNEALING IN NITROGEN ON THE STRUCTURE OF POLYCRYSTALLINE SILICONMCGINN JT; GOODMAN AM.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 601-604; BIBL. 11 REF.Article

DISLOCATION PINNING EFFECT OF OXYGEN ATOMS IN SILICON.HU SM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 53-55; BIBL. 14 REF.Article

INTERACTION DES ATOMES DE CUIVRE AVEC LES DEFAUTS DE STRUCTURE DU GERMANIUM DOPE PAR L'OXYGENEBABICH VM; ZOZULYA AI; IL'CHISHIN VA et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 610-615; ABS. ANGL.; BIBL. 15 REF.Article

ION BEAM SPUTTERING. THE EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS.MCHUGH JA.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 4; PP. 209-215; BIBL. 11 REF.Article

STRAIN AGING IN IRRADIATED VANADIUM CONTAINING OXYGEN.WECHSLER MS; BAJAJ R.1974; SCRIPTA METALLURG.; E.U.; DA. 1974; VOL. 8; NO 7; PP. 885-887; BIBL. 23 REF.Article

DEPTH DISTRIBUTION STUDIES OF CARBON, OXYGEN AND NITROGEN IN METAL SURFACES BY MEANS OF NEUTRON SPECTROMETRY.LORENZEN J.1975; AE-502; SWED.; DA. 1975; PP. (30P.); H.T. 23; BIBL. 2 P.Report

ANNEALING BEHAVIOR OF THE OXYGEN DONOR IN SILICONKANAMORI A.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 287-289; BIBL. 10 REF.Article

HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL GROWTH RELATIONSHIP TO EPITAXIAL STACKING FAULTSKATZ LE; HILL DW.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1151-1155; BIBL. 15 REF.Article

OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON.PATEL JR; JACKSON KA; REISS H et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5279-5288; BIBL. 18 REF.Article

(111, 1/002) ENHANCED BORRMANN EFFECT IN HEAT TREATED CZOCHRALSKI GROWN SILICON CRYSTALSUMENO M; HILDEBRANDT G.1980; Z. NATURFORSCH., A; ISSN 0340-4811; DEU; DA. 1980; VOL. 35; NO 3; PP. 342-344; BIBL. 10 REF.Article

DUAL ION IMPLANTATION IN ZNTE (O+ZN) INTERACTION BETWEEN SOLUBILITY AND STOICHIOMETRYKATIRCIOGLU B; PAUTRAT JL; BENSAHEL D et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 3-4; PP. 183-191; BIBL. 22 REF.Article